| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress noise, by reducing a large transient voltage that is caused to occur because of the inductivity of a load at the time of switching. <P>SOLUTION: With regard to the structure of a high-voltage-side driving circuit portion 4a, the circuit is structured by connecting a second resistance element 15 with a first resistance element 14 and the collector-emitter path of a first transistor 11 in series between a power supply terminal Pb of a second power source 7 and a ground terminal Pe, by connecting a third resistance element 16 with the collector-emitter path of a second transistor 12 in series between the connection point 18 of a first NchFET 3a and a second NchFET 3d connected in series and the power supply terminal Pb of the second power source 7, and by connecting the anode of a diode 13 and the gate of the first NchFET 3a to the connection point 20 of the second transistor 12 and the third resistance element 16. This circuit structure reduces the transient voltage that is generated when the second NchFET 3d at the low-voltage side is turned off so that the noise can be suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
