| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material having a distinct effect to prevent reduction of resist film thickness and also having high resolution and a high focus margin extending effect, to provide a pattern forming method using the same, and to further provide a basic compound suitable for use in the resist material. <P>SOLUTION: The resist material contains a basic compound having a benzimidazole skeleton and a polar functional group represented by formula (1), wherein R<SP>1</SP>is H, a 1 to 10C alkyl, aryl or aralkyl; and R<SP>2</SP>is alkyl having a 1 to 20C polar functional group, one or more ester, acetal or cyano groups may be contained as the polar functional group and one or more hydroxyl, carbonyl, ether, sulfide or carbonate groups may further be contained. The resist material has excellent resolution and focus margin and is useful in microfabrication using an electron beam or far UV. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
