发明名称 METHOD FOR MANUFACTURING UNEVEN SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a simple manufacturing method for reducing the size of the texture of a crystal semiconductor substrate having an uneven structure for optical confinement on the surface. <P>SOLUTION: In the method for manufacturing the uneven substrate for forming the uneven structure by dipping the crystal semiconductor substrate 1 in an alkaline solution containing a surfactant and etching the surface of the substrate, an adhesive 2 is adhered in a dotted manner on the surface of the substrate 1 before dipping the substrate 1 in the alkaline solution. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004349379(A) 申请公布日期 2004.12.09
申请号 JP20030143183 申请日期 2003.05.21
申请人 HITACHI CABLE LTD 发明人 MINAGAWA YASUSHI;TAKAHASHI TAKESHI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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