| 发明名称 |
Method for forming electroless metal low resistivity interconnects |
| 摘要 |
A process for forming electroless metal conductors in an integrated circuit as part of, for example, a damascene or dual damascene process without the use of a seed layer, is described. A catalyst is used to cause the via openings and trenches to be filled from the bottom up, thereby minimizing voids.
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| 申请公布号 |
US2004248403(A1) |
申请公布日期 |
2004.12.09 |
| 申请号 |
US20030458042 |
申请日期 |
2003.06.09 |
| 申请人 |
DUBIN VALERY M.;MOON PETER K. |
发明人 |
DUBIN VALERY M.;MOON PETER K. |
| 分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/288 |
| 代理机构 |
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