| 摘要 |
An indium-containing wafer from which removal of mercury can be reliably performed and a method of manufacturing such a wafer are provided in order to make the mercury C-V method, allowing characteristics of a the indium-containing wafer to be measured with high precision and being a non-destructive test, viable. An indium-containing wafer relating to the present invention is characterized by having, formed on its episurface layer, an added-on mercury-removal layer directed to removing wafer-surface adherent mercury and composed of a compound semiconductor. In addition, a method of manufacturing an indium-containing wafer relating to the present invention is characterized in that after evaluating electrical characteristics of the wafer with, as an electrode, mercury adhered onto the surface of the mercury-removal layer, the superficially adhered mercury is eliminated by removing the mercury-removal layer.
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