发明名称 |
FILM PATTERN FORMING METHOD, A DEVICE AND A MANUFACTURING METHOD THEREOF, AN ELECTRO-OPTIC DEVICE, AN ELECTRIC APPLIANCE, AND A METHOD FOR MANUFACTURING AN ACTIVE MATRIX SUBSTRATE |
摘要 |
PURPOSE: A film pattern forming method is provided to form a fine film pattern with a good precision and stability, thereby capable of manufacturing an active matrix substrate with a desired performance. CONSTITUTION: A function solution(L) is arranged at a partition region(A) partitioned by a bank(B). The function solution(L) is dried, so that a film pattern(C) is formed on a substrate(P). After forming the film pattern(C), the bank(B) is removed or remained. A droplet of the function solution(L) is repeatedly dropped on the substrate(P) with a predetermined pitch(a drop pitch(h)). The drop position of the droplet at the end of the partition region, is below half of that from the end of the region.
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申请公布号 |
KR20040103779(A) |
申请公布日期 |
2004.12.09 |
申请号 |
KR20040037111 |
申请日期 |
2004.05.25 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MIKOSHIBA, TOSHIAKI |
分类号 |
G02F1/1368;B05D1/26;B05D5/12;B05D7/00;B41J2/14;C23C4/12;C23C26/02;G02F1/1345;G09F9/00;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/768;H01L29/786;H01L51/00;H01L51/40;H01L51/50;H05B33/10;H05K3/12;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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