发明名称 SEMICONDUCTOR MEMORY ELEMENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory element that performs data recording operation with a low current, because the element can transmit the quantity of heat required for the phase transition of a chalcogenide substance layer with a small quantity of current, and also to provide a method of manufacturing the element. <P>SOLUTION: The semiconductor memory element is provided with a heat generator disposed between a transistor and a data storing section, and metallic wiring connected to the data storing section. The data storing section contains the chalcogenide substance layer which stores data by causing phase transition when the heat generator generates heat. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349709(A) 申请公布日期 2004.12.09
申请号 JP20040152661 申请日期 2004.05.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI SHOKEN;PARK YOUNG-SOO;LEE WON-TAE
分类号 H01L27/105;H01L27/10;H01L27/24;H01L45/00 主分类号 H01L27/105
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