发明名称 |
SEMICONDUCTOR MEMORY ELEMENT AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory element that performs data recording operation with a low current, because the element can transmit the quantity of heat required for the phase transition of a chalcogenide substance layer with a small quantity of current, and also to provide a method of manufacturing the element. <P>SOLUTION: The semiconductor memory element is provided with a heat generator disposed between a transistor and a data storing section, and metallic wiring connected to the data storing section. The data storing section contains the chalcogenide substance layer which stores data by causing phase transition when the heat generator generates heat. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004349709(A) |
申请公布日期 |
2004.12.09 |
申请号 |
JP20040152661 |
申请日期 |
2004.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
RI SHOKEN;PARK YOUNG-SOO;LEE WON-TAE |
分类号 |
H01L27/105;H01L27/10;H01L27/24;H01L45/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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