| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film high dielectric capacitor which is stable, and has a high yield and high performance. <P>SOLUTION: In the method for manufacturing the thin film high dielectric capacitor having a lower electrode on the insulating film on the surface of a semiconductor substrate, a high dielectric film made of Ba<SB>x</SB>Sr<SB>1-x</SB>TiO<SB>3</SB>, and an upper electrode, a platinum film and a gold film of the thickness for relaxing a stress between the platinum film and the high dielectric film are laminated and formed, heat treated in an oxygen atmosphere, and an upper electrode is formed. Particularly, when the thickness of the platinum film is formed 50-200 nm, the capacitor having excellent characteristics is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
