| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode for light emitting diode element that can improve the light emitting efficiency of a light emitting diode element without impairing the simplicity and adhesive characteristic of bonding, and to provide a light emitting diode element. <P>SOLUTION: The p-type electrode 6 possessed by an InGaN light emitting diode element 10 has an Ag intermediate layer 6b which reflects incident light between an Ni light-transmissive ohmic electrode layer 6a and an Au-pad electrode layer 6c. Since the InGaN light emitting diode element 10 provided with the p-type electrode 6 can emit the incident light to the outside without absorbing the light, the light emitting efficiency of the element 10 can be improved by leaps and bounds without impairing the ohmic characteristics or reliability of the p-type electrode 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
