| 摘要 |
PROBLEM TO BE SOLVED: To prevent the spread of oxidation up to an SiC substrate for thermal oxidation of Si deposited on the SiC substrate. SOLUTION: The silicon carbide substrate 1 on which a silicon film 2 is formed is exposed to the temperature in the upper limit of 900°C under the dry oxygen gas atmosphere for thermal oxidation of the silicon film 2. Accordingly, the silicon film 2 is converted to an oxide film to form an oxide film 3. Thereafter, a gate electrode 4 is formed to form a MOS semiconductor device. Consequently, a silicon carbide semiconductor device having MOS structure showing excellent characteristic can be manufactured. COPYRIGHT: (C)2005,JPO&NCIPI
|
