发明名称 |
APPARATUS AND METHOD FOR TREATING SURFACES OF SEMICONDUCTOR WAFERS USING OZONE |
摘要 |
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation. |
申请公布号 |
WO2004066359(A3) |
申请公布日期 |
2004.12.09 |
申请号 |
WO2004US01792 |
申请日期 |
2004.01.22 |
申请人 |
NOVO RESEARCH INC |
发明人 |
KIM, YONG, BAE;JEONG, IN KWON;KIM, JUNGYUP |
分类号 |
B08B3/00;B08B3/02;B08B3/08;B08B3/12;B08B7/04;H01L;H01L21/00;H01L21/302;H01L21/306;H01L21/31;H01L21/316;H01L21/461;H01L21/469 |
主分类号 |
B08B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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