METHOD FOR FORMING T-TYPE GATE ELECTRODE AND METHOD FOR FORMING MOS TRANSISTOR HAVING T-TYPE GATE ELECTRODE BY USING THE SAME

摘要

PURPOSE: A method for forming a T-type gate electrode and a method for forming a MOS transistor having a T-type gate electrode by using the same are provided to improve characteristics of the MOS transistor by preventing a short channel effect caused by reduction of a length of a gate and preventing an increase of an overlapping region between a source and a drain. CONSTITUTION: An insulating layer pattern is formed only on a gate pattern formation region of a substrate(10) to expose selectively a surface of the substrate. A gate oxide layer(30) is formed on the exposed substrate. A polysilicon pattern divided by the insulating layer pattern is formed on the gate oxide layer. The insulating layer pattern is partially etched to expose partially an upper part of the polysilicon pattern. A gate pattern(44) is formed by growing polysilicon on the upper part and a lateral part of the exposed polysilicon pattern.