发明名称 |
SEMICONDUCTOR MEMORY DEVICE, DISPLAY DEVICE AND PORTABLE ELECTRONIC EQUIPMENT |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device and portable electronic equipment provided with a nonvolatile memory element which can be finely structured without any difficulty. <P>SOLUTION: The semiconductor memory device is provided with a memory cell array 21 in which a plurality of memory elements are arranged and a program verify-circuit 30. The memory elements 1, 33 are provided with a gate electrode 104 formed on a semiconductor layer 102 through a gate insulation film 103, a channel region arranged under the gate electrode 104, a diffusion region 107a arranged at both sides of the channel region and having a channel region and a reverse conduction type, and a memory function object 109 having a function holding electric charges formed at the both sides of the gate electrode 104. A program load register 32 of the program verify-circuit 30 eliminates a state in which write-in is required for a memory element 33 verified initially as that it is written correctly. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004348792(A) |
申请公布日期 |
2004.12.09 |
申请号 |
JP20030141908 |
申请日期 |
2003.05.20 |
申请人 |
SHARP CORP |
发明人 |
YAOI YOSHIFUMI;IWATA HIROSHI;SHIBATA AKIHIDE;MORIKAWA YOSHINAO;NAWAKI MASARU |
分类号 |
G11C16/02;G11C11/56;G11C16/04;G11C16/34;H01L21/28;H01L21/336;H01L21/8234;H01L21/8247;H01L27/088;H01L27/115;H01L29/788;H01L29/792;H01L31/062;(IPC1-7):G11C16/02;H01L21/824;H01L21/823 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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