发明名称 ION-ASSISTED VAPOR DEPOSITION APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide an ion-assisted vapor deposition apparatus which is capable of manufacturing a high-quality narrow band pass filter and which is in the size almost equal to a conventional apparatus and does not require many correction boards, and to provide a method therefor. SOLUTION: An ion-assisted vapor deposition apparatus 100 is equipped with: a vacuum chamber A which can keep the inside in a substantially vacuum state; a vapor source which vaporizes a vaporization material inside the vacuum chamber; and a substrate holder 10a which holds a disk substrate 8 while rotating the substrate where a thin film is to be deposited by depositing the vaporization material vaporized from the vaporization source. In this apparatus, deformable correction boards 23a, 23b are disposed to correct the distribution of the thickness of the thin film in the radial direction of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004348075(A) 申请公布日期 2004.12.09
申请号 JP20030147982 申请日期 2003.05.26
申请人 SHIN MEIWA IND CO LTD 发明人 KOIZUMI YASUHIRO
分类号 G02B5/28;C23C14/22;C23C14/24;(IPC1-7):G02B5/28 主分类号 G02B5/28
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