| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of a film deposition rate even when the cumulative film thickness is increased when a dielectric material or the like is vacuum-deposited on a substrate to form a thin film. SOLUTION: When a film material 10 is atomized on the upper direction of a heater 13 arranged at the inside of a vacuum part 1 for vapor deposition from a film material feeding means 12, and is vapor-deposited on a substrate 7 arranged so as to be confronted with the heater 13 to deposit a thin film, a pressure difference is intermittently generated between a water-cooled plate 17 with the substrate 7 installed and the heater 13, e.g., by the opening and closing of a shutter 9, so that a film deposition rate at which the film material 10 vaporized at the upper direction of the heater 13 is collided with the surface of the substrate to deposit the thin film is controlled. By making the vapor of the film material 10 collide with the surface of the substrate 7 at once at high speed using a flow generated from the pressure difference, i.e., by controlling the collision speed, the film deposition rate of the film material 10 can be improved. By repeating this method, the reduction of the film deposition rates in total can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI
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