| 摘要 |
PROBLEM TO BE SOLVED: To provide a Zr and Hf oxynitride(ZrO<SB>x</SB>N<SB>y</SB>and HfO<SB>x</SB>N<SB>y</SB>) films and a Zr and Hf silicon oxynitride(Zr(Si)<SB>z</SB>O<SB>x</SB>N<SB>y</SB>and Hf(Si)<SB>z</SB>O<SB>x</SB>N<SB>y</SB>) films which are suitable to a use for dielectric, such as dielectric gate, on a substrate. SOLUTION: A gaseous precursor containing Zr or Hf is supplied to a chemical vapor deposition chamber, and a oxygen source and nitrogen source are separately supplied to the chemical vapor deposition chamber so that the oxygen source and nitrogen source do not mix with the precursor before supplying to the deposition chamber, and a reaction mixture is produced in the chemical vapor deposition chamber, then, the produced reaction mixture comes into contact with the heated substrate at a high temperature in the chemical vapor deposition chamber to deposit a Zr or Hf oxynitride film on it. A silicon source is added to the reaction mixture to produce a Zr or Hf silicon oxynitride films. COPYRIGHT: (C)2005,JPO&NCIPI
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