| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that can be improved in manufacturing yield, and to provide a method of manufacturing the device. SOLUTION: The semiconductor storage device is provided with a memory cell 27 having a first ferromagnetic film 28, a tunnel barrier film 29 formed on the film 28, and a second ferromagnetic film 30 formed on the film 29. The device is also provided with a side-wall insulating film 40 formed to surround at least the side face of the second ferromagnetic film 30 and an interlayer insulating film 41 formed to cover the memory cell 27 and insulating film 40. COPYRIGHT: (C)2005,JPO&NCIPI
|
