发明名称 Cold cathode type electron emitting device, method of manufacturing the same and method of driving the same
摘要 A method of manufacturing a cold cathode type electron emitting device, comprising forming a pair of electrodes, which are spaced from each other, on a substrate, forming conductive thin films, which are electrically connected with the pair of electrodes and have a cracked portion therebetween, on a space between the pair of electrodes, forming conductive deposits on the cracked portion of the conductive thin films to form an electron emission section, and subjecting the electron emission section to a treatment using plasma to expand a gap between the conductive deposits on the cracked portion.
申请公布号 US2004245906(A1) 申请公布日期 2004.12.09
申请号 US20030725509 申请日期 2003.12.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ISHIZUKA YOSHIKI;FUKUDA KATSUYOSHI
分类号 H01J1/00;H01J1/316;H01J9/02;H01J9/04;H01J9/12;H01J29/04;H01J31/12;(IPC1-7):H01J9/04 主分类号 H01J1/00
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