| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for semiconductor crystal growth and a crystal growing apparatus which can easily grow a non-doped semiconductor crystal layer having a sufficiently low dislocation density and a high resistance on a semiconductor substrate for a base, and also to provide a high-quality and high-performance semiconductor substrate manufactured by using these. SOLUTION: The crystal growing apparatus is provided with a crystal growth chamber 2 which can be kept to a vacuum state, material supplying sections 3 for supplying a crystal material into the crystal growth chamber 2, and a supporting section 4 which is installed inside the crystal growth chamber 2 to support the semiconductor substrate W for a basic material. The supporting section 4 has a supporting member 6 which has a supporting curved surface which is curved in the shape of a convex with a predetermined curvature and can support the semiconductor substrate W for a basic material along the supporting curved surface. COPYRIGHT: (C)2005,JPO&NCIPI
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