Displacement method to grow cu overburden

摘要

A damascene-formed conductive region having a recess formed at the top surface thereof by a chemical-mechanical polish (CMP) process is repaired or regrown using a displacement method. A displacement material is deposited over the recessed conductive material. The displacement material is removed from a top surface of the insulating layer surrounding the damascene conductive region, and the semiconductor device is placed in a solution. The displacement material reacts with the solution, and copper in the solution is grown as a result of the displacement over the recess of the conductive region. The displacement method results in reducing or eliminating the recess formed by the CMP process.