Homoepitaxial gallium-nitride-based light emitting device and method for producing

摘要

A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm<-1 >at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 10<4 >per cm<2 >and an optical absorption coefficient below about 100 cm<-1 >at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.