发明名称 |
High burst rate write data paths for integrated circuit memory devices and methods of operating same |
摘要 |
Integrated circuit memory devices include a memory cell array that is configured to write N data bits in parallel and a write data path that is configured to serially receive 2N data bits from an external terminal. The write data path includes 2N write data buffers that are configured to store the 2N data bits, 2N switches, and N data lines that are configured to connect at least N of the 2N switches to the memory cell array to write therein N data bits in parallel. A reduced number of local data lines and/or global data lines may be provided.
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申请公布号 |
US2004246783(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040792425 |
申请日期 |
2004.03.03 |
申请人 |
LEE YUN-SANG;LEE JUNG-BAE;LA ONE-GYUN;KIM SUNG-RYUL |
发明人 |
LEE YUN-SANG;LEE JUNG-BAE;LA ONE-GYUN;KIM SUNG-RYUL |
分类号 |
G11C5/00;G11C7/10;G11C11/4093;H03M9/00;(IPC1-7):G11C5/00 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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