METHOD FOR MAKING GROUP III NITRIDE DEVICES AND DEVICES PRODUCED THEREBY
摘要
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
申请公布号
WO2004084275(A3)
申请公布日期
2004.12.09
申请号
WO2004US08266
申请日期
2004.03.18
申请人
CRYSTAL PHOTONICS, INCORPORATED;CHAI, BRUCE, H., T.;GALLAGHER, JOHN, JOSEPH;HILL, DAVID, WAYNE
发明人
CHAI, BRUCE, H., T.;GALLAGHER, JOHN, JOSEPH;HILL, DAVID, WAYNE