SEMICONDUCTOR DEVICE, IN WHICH THERMAL ELECTRON INJECTION IN WRITE OPERATION AND EXTRACTING THERMAL ELECTRON FROM THE GATE ELECTRODE IN ERASE OPERATION ARE USED

摘要

PURPOSE: A semiconductor device is provided to realize the nonvolatile semiconductor memory device having a high reliability by implementing the authentication with a reading current by an erase unit. CONSTITUTION: A semiconductor device includes a memory cell provided with a source diffusion layer, a drain diffusion layer, an insulation layer and a gate unit. The source diffusion layer and the drain diffusion layer are formed on the one side of the semiconductor substrate with separating by a predetermined distance from each other. The insulation layer is inserted between the source diffusion layer and the drain diffusion layer. The gate unit is made by stacking the charge accumulating layer and the gate electrode. And, before the erase and write operation of the memory cell is performed, the memory cell performs the erase and write operation; and thereafter the erase of the memory cell performs the erase of the memory cell.