| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the manufacturing cost of a semiconductor device for amplification used for an power amplifier for base station. <P>SOLUTION: A heat sink 1A working as a mounting base of an amplifier 20 is made of Cu-Mo alloy or Cu-W alloy metallic material whose coefficient of thermal expansion is approximate to that of a silicon (Si) because a first area (La) to which a transistor 2 for amplification is connected is exposed at a high temperature, and no large thermal stress is applied to a joint part with the transistor 2 as a result. In addition, a second area (Lb) surrounding the first area (La) is made of Cu that can be obtained at a lower cost than the Cu-Mo alloy or Cu-W alloy. Since the second area (Lb) is located away from a position where the transistor 2 generating a large amount of heat is connected, no large thermal stress is applied to the joint part with the transistor 2 even if the second area (Lb) is made of Cu having a large difference of the coefficient of thermal expansion from silicon (Si). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
