| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a large crystal grain by laser annealing a thin film without wasting the laser energy. <P>SOLUTION: A laser beam emitted from a laser light source 300 is passed through an a-Si layer a plurality of times by turning back the laser beam on the optical path passing through the a-Si layer on a substrate 150 to be annealed. Since an operation for absorbing energy when the laser beam passes through the a-Si layer is repeated a plurality of times, input energy of the laser beam is not wasted. Furthermore, a large crystal grain can be formed by making the energy absorption distribution of the a-Si layer constant in the transmitting direction at a part where the energy beam is passed a plurality of times and making the solid-liquid interface flat along the optical path thereby realizing lateral epitaxial growth in the a-Si layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
