| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To perform high-speed writing in a nonvolatile semiconductor memory device. <P>SOLUTION: The system for controlling writing is provided with a gate electrode 104 formed through a gate insulating film 103 on a semiconductor layer 102, a channel region arranged below the gate electrode 104, the arrangement of a plurality of memory elements 1 having a memory function body 109 having the diffusion regions 107ab of conductive types reverse to that of the channel region in both sides of the channel region and the function of holding charges on both sides of the gate electrode 104, a memory array including a page buffer circuit, and a CPU for controlling writing in the memory array. The CPU reads the first plane of the page buffer circuit by the first byte of data, and writes in the first plane by the first byte of the stored data. The CPU reads a second plane by the second byte of the data during the writing in the memory array by the first byte of the data stored in the first plane, and writes by the second byte of the data stored in the second plane. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
