| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high breakdown voltage transistor having a high junction breakdown voltage characteristics, and a low voltage transistor having high current drive characteristics and which secures element isolation performance in both the transistor forming regions. SOLUTION: The semiconductor device has the high breakdown voltage transistor (a) and the low voltage transistor (b) having different sidewall widths. The sidewall of the high breakdown voltage transistor (a) is formed by laminating four layers of a first sidewall film 12, a second sidewall film 13, a third sidewall film 14 and a fourth sidewall film 21 from both the sidewalls of a gate electrode 10a toward a side. The sidewall of the low voltage transistor (b) is formed by laminating three layers of the first sidewall film 12, the second sidewall film 13 and the fourth sidewall 21 from both side faces of a gate electrode 10b toward the side. COPYRIGHT: (C)2005,JPO&NCIPI
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