发明名称 SUBSTRATE TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment device which can effectively and efficiently suppresses the generation of dew concentration in the supply path of a material vapor. SOLUTION: The device is provided with heaters 9-11 at least at one position in the supply path extending from a vaporizer 4 for vaporizing a material to a treatment chamber 1 for treating a substrate w, and besides, is provided with a means 21 for calculating partial pressure of the material vapor at positions corresponding to positions where the heaters 9-11 are located, and a means 22 for controlling temperature of the heaters 9-11 based on the results of calculation of the means 21 so that the partial pressure of the material vapor is so as to be not more than a saturation vapor pressure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349439(A) 申请公布日期 2004.12.09
申请号 JP20030144367 申请日期 2003.05.22
申请人 RENESAS TECHNOLOGY CORP 发明人 MINAMI TOSHIHIKO
分类号 C23C16/455;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/455
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