发明名称 |
High voltage level shifter for switching high voltage in non-volatile memory integrated circuits |
摘要 |
A high voltage level shifter utilizing only low voltage PMOS and low voltage NMOS devices. The high voltage level shifter is used to distribute the high voltage almost equally among the PMOS devices and almost equally among the NMOS devices to meet the device electrical specification of low voltage MOS devices for various breakdown mechanisms. A layout technique is also used to achieve a much higher junction breakdown of N+ drain to P-substrate and a better gated diode breakdown of NMOS devices. |
申请公布号 |
AU6853396(A) |
申请公布日期 |
1997.03.19 |
申请号 |
AU19960068533 |
申请日期 |
1996.08.21 |
申请人 |
INFORMATION STORAGE DEVICES, INC. |
发明人 |
HIEU VAN TRAN;TREVOR BLYTH |
分类号 |
H03K19/0185;H03K3/356;H03K17/10 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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