发明名称 |
METHOD FOR FABRICATING A SELF-ALIGNED BIPOLAR TRANSISTOR HAVING INCREASED MANUFACTURABILY AND RELATED STRUCTURE |
摘要 |
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a base oxide layer situated on top surface of the base. The bipolar transistor further comprises a sacrificial post situated on base oxide layer. The bipolar transistor further comprises a conformal layer situated over the sacrificial post and top surface of the base, where the conformal layer has a density greater than a density of base oxide layer. The conformal layer may be, for example, HDPCVD oxide. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer. The sacrificial planarizing layer has a first thickness in a first region between first and second link spacers and a second thickness in a second region outside of first and second link spacers, where the second thickness is generally greater than the first thickness. |
申请公布号 |
WO2004107409(A2) |
申请公布日期 |
2004.12.09 |
申请号 |
WO2004US08051 |
申请日期 |
2004.03.17 |
申请人 |
NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR |
发明人 |
KALBURGE, AMOL;YIN, KEVIN, Q.;RING, KENNETH |
分类号 |
H01L21/331;H01L29/08 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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