Semiconductor production process for high aspect ratio memory circuits forms surfaces perpendicular and not perpendicular to substrate and ion implants to give selective wet etch

摘要

A semiconductor production process comprises forming surfaces both perpendicular (B1) and not perpendicular (B2) to the substrate surface (1) and vertically ion-implanting (I) the latter to give it an increased wet etch rate. Selective wet etching of the non-perpendicular surfaces (B2) is then performed.