HIGH-DENSITY PLASMA OXIDE LAYER DEPOSITION APPARATUS HAVING TWO OR MORE SEPARABLE CHUCKS FOR EXCLUDING INFLUENCE OF ELECTRIC POTENTIAL AND FORMING UNIFORMLY DENSITY DISTRIBUTION OF PLASMA IONS

摘要

PURPOSE: A high-density plasma oxide layer deposition apparatus having two or more separable chucks for excluding an influence of electric potential and forming uniformly density distribution of plasma ions is provided to exclude processing defects due to voids by forming an oxide layer having an uniform thickness on a semiconductor substrate and preventing generation of voids within a trench in a process for forming an oxide layer. CONSTITUTION: A high-density plasma oxide layer deposition apparatus includes a chuck(160,170), a heat insulating material(150) for protecting the chuck, and a lower electrode(180,190) connected to the chuck. The chuck is divided into two more chucks. Lower electrode are connected to each of the divided chucks. Each of the divided chucks is divided into the heat insulating materials. The same electric power is applied to each of the divided chucks.