| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an asymmetric memory cell and a method of forming the memory cell. <P>SOLUTION: The method of forming the asymmetrical memory cell includes a step of forming a lower electrode having a first area, a step of forming an electric pulse various-resisting (EPVR) layer placed on the lower electrode, and a step of forming an upper electrode placed on the EPVR layer and having a second area smaller than the first area. In several situations, the second area is smaller than the first area by at least about 20%. The EPVR material used for forming the EPVR layer is a colossal magnetoresistance (CMR) material, high temperature superconducting (HTSC) material, or perovskite metal oxide material, etc. The method further includes a step of introducing an electric field between electrodes, a step of introducing a current into the EPVR layer adjoining the upper electrode, and a step of adjusting the resistance of the EPVR layer in response to the step of introducing the current to the EPVR layer. Usually, the resistance is adjusted within the range of 100 ohm to 10 mega-ohm. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
