| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element wherein a high breakdown voltage is easily realized. SOLUTION: This semiconductor substrate 11 is provided with an n-type drift area 11a configuring its one face. A p-type cell semiconductor area 21 configuring a semiconductor element cell is formed in the predetermined part of the surface area of the drift area 11a. A plurality of reduced surface field areas 22 and 23 are configured of the p-type semiconductor area whose impurity concentration is lower than that of the cell semiconductor area 21, and formed in the surface area of the drift area 11a so that the cell semiconductor area 21 is surrounded. COPYRIGHT: (C)2005,JPO&NCIPI |
