| 摘要 |
A dielectric film is formed over the entire surface of a wafer having a plurality of electrode pads in a manner to expose the electrode pads, a first UBM that is a first metal layer is formed over the electrode pad and the dielectric film, a second UBM that is a second metal layer is formed on the first UBM, and a bump is formed by an electroplating processing over the electrode pad through the first and second UBMs, such that the first UBM is formed to be broader than the bottom area of the bump. In this case, since the first UBM is formed to be broader than the bottom area of the bump, the adhesion supporting force of the bump at the first UBM is increased, and consequently, the adhesion of the bump with the electrode pad through the first UBM can be improved.
|
