| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of realizing a channel elimination type flash memory capable of preventing a market failure involved closely in such a bit failure that a short-circuit between a wordline and a base occurs even if W/E of a memory cell is repeated, and to provide an electronic card and electronic equipment. <P>SOLUTION: In this channel elimination type flash memory having a redundant wordline group consisting of a plurality of redundant wordlines in addition to a normal memory space of a memory cell array and provided with a function for replacing a normal wordline group including a defective memory cell with the redundant wordline group, in an eliminating operation, positive first voltage is applied to the base of the memory cell array,≤0V second voltage is applied to normal wordlines, and third voltage is applied to the normal wordline group including the defective memory cell or all of the wordlines included in the redundant wordline group. A potential difference between the first voltage and the third voltage is set to be smaller than a potential difference between the first voltage and the second voltage. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
