SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which forms sidewalls having double structure by a simple process. SOLUTION: A gate insulating film 5 and gate electrode 7a, 7b are formed on a p-type well 3 and an n-type well 4 formed on a semiconductor substrate 1. After stacking a silicon nitride film on the gate electrodes 7a 7b, the silicon nitride film is treated with anisotropic etching to form first sidewalls 13 on the sidewalls of the gate electrodes 7a, 7b. Then second sidewalls 14a and a silicon oxide film 14 are used by using the ISSG oxidation method. COPYRIGHT: (C)2005,JPO&NCIPI