| 摘要 |
PROBLEM TO BE SOLVED: To provide a new epitaxial substrate, with which a group III nitride layer group low in dislocation and excellent in crystallinity, especially, a nitride layer group containing Al can be formed; and to provide a method for reducing dislocations in the group III nitride layer group to be formed. SOLUTION: The epitaxial substrate 10 has a group III nitride ground layer 2 containing at least Al, and having a dislocation density of≤1×10<SP>11</SP>/cm<SP>2</SP>and a half-value width of X-ray rocking curve on the (002) surface of≤200 s, an intermediate layer 3 containing a transition metal having a melting point of≥1,300°C, and a group III nitride layer group 4 on a prescribed substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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