Circular thin film transistor structure

摘要

The present invention provides a circular thin film transistor structure that is located in the intersection of the gate line and the data line. A circular gate electrode is defined when forming the gate line. A circular source electrode and an annular drain electrode are defined when forming the data line. The circular source is located in the annular drain electrode. This structure can avoid the voltage value variation in the pixel region because of the misalignment between the source electrode and the gate electrode.