| 摘要 |
PURPOSE: A boosting circuit of a semiconductor memory device is provided to obtain stable boosting voltage by pumping power supply voltage. CONSTITUTION: A boosting circuit of a semiconductor memory device includes a pre-boosting circuit(340), a bootstrap circuit unit(310), a reference voltage generation unit(320) and a clamp circuit unit(330). The pre-boosting circuit outputs the high voltage by pumping the power supply voltage using the coupling effect of capacitor during the boosting. The bootstrap circuit unit outputs the boosting voltage by selectively boosting the power supply voltage and the output voltage of the pre-boosting circuit unit. The reference voltage generation unit outputs the uniform reference voltage independent of the change of the power supply voltage. The clamp circuit unit compares the boosting voltage outputted from the bootstrap circuit unit with the reference voltage outputted from the reference voltage generation unit. And, if the boosting voltage is larger than the reference voltage, the clamp circuit unit drops the boosting voltage to the target voltage.
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