发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DUMMY SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To adhere a plating residue to a satin finished surface large in a frictional coefficient and remove accurately it from a male die by a method wherein a satin finished portion of an external lead terminal of a dummy semiconductor device is performed is bent by the male die. SOLUTION: A punch 1 of a molding die is dropped, and an external terminal 41 projecting from a bent die 2 is bent. At this time, under a state that a solder plating residue 5 is adhered to a side face, the punch 1 is dropped. Under a state that the external lead terminal 41 is interposed between the punch 1 and the bent die 2, molding is completed. Herein, the solder plating residue 5 adhered to the side face of the punch 1 is frictionally adhered to an aventurine processing face of a face of the external lead terminal 41 accompanied by dropping of the punch 1. The punch 1 is raised, but as the solder plating residue 5 is adhered to the face of the external lead terminal 41 larger in the frictional coefficient than the face of the punch 1, it does not adhere to the face of the punch 1 again, and under a state that the solder plating residue 5 is completely removed, the punch 1 is raised.</p>
申请公布号 JPH09260563(A) 申请公布日期 1997.10.03
申请号 JP19960070291 申请日期 1996.03.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIMURA HIROKAZU;NISHIMURA KAZUHIRO
分类号 B21D5/01;H01L23/50;H05K3/34;(IPC1-7):H01L23/50 主分类号 B21D5/01
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