发明名称 |
GAS INJECTION APPARATUS FOR INJECTING UNIFORMLY SOURCE AND REACTION GASES ON ENTIRE SURFACE OF WAFER |
摘要 |
PURPOSE: A gas injection apparatus for injecting uniformly source and reaction gases on an entire surface of a wafer is provided to inject uniformly a process gas on an upper surface of the wafer by changing shapes between an inner plate and an outer plate to control a flow direction and a flow angle of the process gas. CONSTITUTION: An inner plate(144) is coupled to an outer circumference of a susceptor(132) on which a wafer is loaded. An outer plate is installed at a predetermined position apart from the inner plate. A gas injector includes a gas inflow hole formed in a process chamber, a gas injection hole at one end of the gas inflow hole, and a gas inflow path(146) formed between the inner plate and the outer plate.
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申请公布号 |
KR20040103066(A) |
申请公布日期 |
2004.12.08 |
申请号 |
KR20030034952 |
申请日期 |
2003.05.30 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
JUN, CHANG YEOP;KIM, YEONG ROK;LEE, JEONG BEOM |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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