| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film semiconductor device which hardly deteriorates in throughput, is high in reliability and excellent in device characteristics. SOLUTION: This semiconductor device is equipped with a transparent insulating substrate 100, a thin film semiconductor layer formed on the substrate 100, and a thin transistor provided to the thin film semiconductor later. The above thin film transistor is equipped with a high-resistance semiconductor channel region, a drain region 104, and a source region 103 both formed of low-resistance semiconductor and produced adjacent to the channel region, a gate insulating film 106 formed on the channel region, and a gate electrode 108 provided onto the gate insulating film 106, wherein the gate electrode 108 has a tapered upper side wall and a nearly vertical lower side wall.</p> |
