发明名称 FET-sensor and method for driving such a sensor
摘要 <p>Embedded in a semiconductor substrate, a field effect transistor (FET) (30) has a gate connection (3) linked to a guard ring (8) or a sensitive gate (1). A triggering device (50) switches a semiconductor sensor from a measuring phase to an inactive phase, within which the FET's connections are set at equal potential. An independent claim is also included for a method for triggering a semiconductor sensor.</p>
申请公布号 EP1484605(A2) 申请公布日期 2004.12.08
申请号 EP20040011853 申请日期 2004.05.19
申请人 MICRONAS GMBH 发明人 FRERICHS, HEINZ-PETER,DR.
分类号 G01N27/414;(IPC1-7):G01N27/414 主分类号 G01N27/414
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