发明名称 |
FET-sensor and method for driving such a sensor |
摘要 |
<p>Embedded in a semiconductor substrate, a field effect transistor (FET) (30) has a gate connection (3) linked to a guard ring (8) or a sensitive gate (1). A triggering device (50) switches a semiconductor sensor from a measuring phase to an inactive phase, within which the FET's connections are set at equal potential. An independent claim is also included for a method for triggering a semiconductor sensor.</p> |
申请公布号 |
EP1484605(A2) |
申请公布日期 |
2004.12.08 |
申请号 |
EP20040011853 |
申请日期 |
2004.05.19 |
申请人 |
MICRONAS GMBH |
发明人 |
FRERICHS, HEINZ-PETER,DR. |
分类号 |
G01N27/414;(IPC1-7):G01N27/414 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|