发明名称 |
QUANTUM DEVICE |
摘要 |
Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a. <IMAGE> |
申请公布号 |
EP1484800(A1) |
申请公布日期 |
2004.12.08 |
申请号 |
EP20030744009 |
申请日期 |
2003.03.07 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD.;KOSHIDA, NOBUYOSHI |
发明人 |
KOMODA, TAKUYA;KOSHIDA, NOBUYOSHI;ICHIHARA, TSUTOMU |
分类号 |
B82B1/00;C09K11/59;H01J1/312;H01J9/02;H01L29/06;H01L29/66;(IPC1-7):H01L29/06;H01L33/00 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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