METHOD FOR GENERATING MASK DISTORTION DATA USED IN LITHOGRAPHY PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, EXPOSURE METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, PARTICULARLY CONCERNED WITH IMPROVING THE ACCURACY OF DISTORTION MEASURMENT

摘要

PURPOSE: A method for generating mask distortion data used in a lithography process for producing a semiconductor device, an exposure method using the same, and a method for manufacturing a semiconductor device using the same are provided to correct the distortion of a mask by improving the accuracy of distortion measurement. CONSTITUTION: The second positional accuracy measurement marks are formed at the same positions as first positional accuracy measurement marks on mask blanks having the second thin layer which is formed so as to have at least one layer. The third positional accuracy measurement marks are formed on the second thin layer and the second thin layer is used as a position positional accuracy measurement mask. Positions of the second positional accuracy measurement marks and the third positional accuracy measurement marks of the positional accuracy measurement mask are measured. A correlation function between the positions of the second positional accuracy measurement marks and the third positional accuracy measurement marks of the positional accuracy measurement mask is calculated. Positions of the first positional accuracy measurement marks of the production mask are measured. Mask distortion data on the first thin layer of the production mask is generated from positions of the first positional accuracy measurement marks of the production mask by using the correlation function.