METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING HYDROGEN PLASMA TREATMENT

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to secure ohmic contact properties by performing a hydrogen plasma treatment after etching for contact and to reduce fabrication cost by using a bit of conventional equipment. CONSTITUTION: An interlayer dielectric(3) and a photoresist pattern(4) are sequentially formed on a silicon substrate(1) including a plurality of gates(2). A contact hole(5) for exposing a junction region of the substrate is formed by etching selectively the interlayer dielectric using the photoresist pattern as an etching mask. The photoresist pattern is removed therefrom. A dry-etching process and a nitride and hydrogen plasma treatment are sequentially performed on the resultant structure to remove an oxygen polymer and a C-F based polymer from a surface of the exposed junction region.