METHOD FOR FABRICATING STABLY SEMICONDUCTOR DEVICE BY INCREASING PROCESS MARGIN WHEN ETCHING HIGH-K LAYER

摘要

PURPOSE: A method for fabricating stably a semiconductor device by increasing a process margin is provided to increase an etching margin in a process for etching a high-k layer by performing a dry-etch process to remove the high-k layer except for a generated damage layer and performing a wet-etch process to removed the damage layer. CONSTITUTION: A method for fabricating stably a semiconductor device by increasing a process margin includes an etching process for etching a high-k layer(103) formed through an oxide layer(102) containing silicon which is formed on a semiconductor substrate(101). A damage layer(104) only formed in the high-k layer is left by dry-etching the high-k layer. The high-k layer except for the damage layer is removed by the etching process. The damage layer is removed by a wet-etch process.