METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR RESTRAINING DEFORMATION OF ArF RESIST

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to restrain the deformation of ArF resist in an etching process by using a Cl2 based gas as an etching gas. CONSTITUTION: An interlayer dielectric(23) is deposited on a semiconductor substrate(21) with a plurality of gates(22). A noble metal film(24) for a hard mask is deposited on the interlayer dielectric. An ArF resist pattern(25) for defining a contact region is formed thereon. The noble metal film is selectively etched by using the ArF resist pattern as an etching mask under an Ar and Cl2 gas atmosphere. The ArF resist pattern is removed therefrom. The substrate is selectively exposed to the outside between the gates by etching the interlayer dielectric using the noble metal pattern as an etching mask. The noble metal pattern is removed therefrom.